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Schottky Barrier Diode Silicon Epitaxial
1SS413
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS413
1: Cathode 2: Anode
1: Cathode 2: Anode
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2002-11
2021-12-16 Rev.4.0
1SS413
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
25
V
Reverse voltage
VR
20
Peak forward current
IFM
100
mA
Average rectified current
IO
50
mA
Power dissipation
PD (Note 1)
100
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj
125
�
Storage temperature
Tstg
-55 to 125
�
Note: Using continuously under heavy loads (e.g.
1SS413 Datasheet
