Datasheet4U Logo Datasheet4U.com

1SS413CT - Schottky Barrier Diode

Key Features

  • (1) Low forward voltage : VF(3) = 0.50 V (typ. ) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ. ) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Power dissipation PD (Note 1) 100 mW.

📥 Download Datasheet

Datasheet Details

Part number 1SS413CT
Manufacturer Toshiba
File Size 172.64 KB
Description Schottky Barrier Diode
Datasheet download datasheet 1SS413CT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE SEMTECH
1SS41 Switching Diode Rohm
1SS417FN2 SURFACE MOUNT SCHOTTKY BARRIER Pan Jit International
1SS417TM HIGH SPEED SWITCHING DIODE Pan Jit International
1SS400 SURFACE MOUNT FAST SWITCHING DIODE LITE-ON

Other Datasheets by Toshiba

Part Number Description
1SS413 Schottky Barrier Diode
1SS412 Silicon Diode
1SS416 Schottky Barrier Diode
1SS416CT Silicon Epitaxial Schottky Barrier Type Diode
1SS417 Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Power dissipation PD (Note 1) 100 mW Non-repetitive peak forward surge current IFSM (Note 2) 1 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.g.