Datasheet Summary
Schottky Barrier Diode Silicon Epitaxial
1. Applications
- High-Speed Switching
2. Features
(1) Low forward voltage : VF(3) = 0.50 V (typ.) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ.)
3. Packaging and Internal Circuit
CST2
1: Cathode 2: Anode
4....
