1SS413CT - Schottky Barrier Diode

Product Overview

Toshiba

Part number	1SS413CT
Manufacturer	Toshiba
File Size	172.64 KB
Description	Schottky Barrier Diode
Datasheet	1SS413CT Datasheet
Additional preview pages of the 1SS413CT datasheet.

(1) Low forward voltage : VF(3) = 0.50 V (typ. ) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ. ) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 25 V Reverse voltage VR 20 Peak forward current IFM 100 mA Average rectified current IO 50 mA Power dissipation PD (Note 1) 100 mW.

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Published: May 28, 2016 |