1SS422 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA Small package suitable for mounting on a small space 1SS422 Unit: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in...