| Part Number | 1SS422 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS422 High-Speed Switching Applications Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA Small package suitable for mounting on a small . 4 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability. |