• Part: 1SS422
  • Description: Silicon Epitaxial Schottky Barrier Type Diode
  • Manufacturer: Toshiba
  • Size: 316.98 KB
Download 1SS422 Datasheet PDF
Toshiba
1SS422
1SS422 is Silicon Epitaxial Schottky Barrier Type Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type High-Speed Switching Applications - Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA - Small package suitable for mounting on a small space Unit:...