1SS421 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	1SS421
Manufacturer	Toshiba
File Size	163.76 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS421 Datasheet
Additional preview pages of the 1SS421 datasheet.

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS421 1SS421 High-Speed Switching Application Unit: mm Low forward voltage: VF (3) = 0.50V (max) Abusolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VR IFM IO IFSM P* 30 V 300 mA 200 mA 1 A 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Cu pad dimension of 4 mm × 4 mm. Note: Using continuously under heavy loads (e.g.

Published: May 28, 2016 |