Datasheet Details
| Part number | 1SS420 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 169.16 KB |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
| Datasheet | 1SS420-Toshiba.pdf |
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Overview: TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm Absolute Maximum Ratings (Ta = 25°C).
| Part number | 1SS420 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 169.16 KB |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
| Datasheet | 1SS420-Toshiba.pdf |
|
|
|
| Part Number | Description |
|---|---|
| 1SS420CT | Silicon Diode |
| 1SS421 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS422 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS423 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS424 | Silicon Diode |
| 1SS426 | Silicon Diode |
| 1SS427 | Silicon Diode |
| 1SS403E | Silicon Epitaxial Planar Switching Diodes |
| 1SS405 | Schottky Barrier Diode |
| 1SS406 | Schottky Barrier Diode |