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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
1SS420
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
35
V
Reverse voltage
VR
30
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
200
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS420 Datasheet
