1SS420 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	1SS420
Manufacturer	Toshiba
File Size	169.16 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS420 Datasheet
Additional preview pages of the 1SS420 datasheet.

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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420 High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 1SS420 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 200 mA Surge current (10 ms) IFSM 1 A Power dissipation P* 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.

Published: May 28, 2016 |