1SS423 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	1SS423
Manufacturer	Toshiba
File Size	334.53 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS423 Datasheet
Additional preview pages of the 1SS423 datasheet.

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications  Small package  Low forward voltage: VF (3) = 0.56 V (typ.)  Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) VR IFM IO IFSM 40 V 200* mA 100* mA 1* A 1.ANODE1 2.CATHODE2 3.CATHODE1 ANODE2 Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg 55 to 125 °C JEITA ― Operating temperature range Topr 40 to 100 °C Note: Using continuously under heavy loads (e.g.

Published: May 28, 2016 |