1SS423 Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) 1SS423 Unit:.
1SS423 Datasheet Details
| Part number | 1SS423 |
|---|---|
| Datasheet | 1SS423-Toshiba.pdf |
| File Size | 334.53 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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