1SS423 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max) 1SS423 Unit:.
- Part: 1SS423
- Manufacturer: Toshiba (official site)
- Size: 334.53 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 1SS420 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS420CT | Silicon Diode |
| 1SS421 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS422 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS424 | Silicon Diode |