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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS423
Ultra-High-Speed Switching Applications
Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 μA (max)
1SS423
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45
V
Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms)
VR IFM IO IFSM
40
V
200*
mA
100*
mA
1*
A
1.ANODE1 2.CATHODE2 3.CATHODE1
ANODE2
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
JEDEC
―
Storage temperature range
Tstg
55 to 125
°C
JEITA
―
Operating temperature range
Topr
40 to 100
°C
Note: Using continuously under heavy loads (e.g.
1SS423 Datasheet
