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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS420CT
High-Speed Switching Applications
• Low reverse current: IR = 5 μA (max)
0.6±0.05
1SS420CT
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Maximum (peak) reverse voltage
Symbol VRM
Rating 35
Unit V
0.38
+0.02 -0.03
0.5±0.03 0.05±0.03
Reverse voltage
VR 30 V
Maximum (peak) forward current IFM 300 mA
Average forward current Surge current (10 ms) Power dissipation
IO IFSM
P
200 1
150 *
mA A mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55 to 125
°C
CST2
Operating temperature range
Topr −40 to 100 °C JEDEC
―
* Mounted on a glass-epoxy circuit board of 20 mm × 20 mm,
JEITA
―
pad dimensions of 4 mm × 4 mm.
1SS420CT Datasheet
