1SS420CT Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: Using continuously under heavy loads (e.g.
1SS420CT datasheet by Toshiba.
| Part number | 1SS420CT |
|---|---|
| Datasheet | 1SS420CT-Toshiba.pdf |
| File Size | 134.82 KB |
| Manufacturer | Toshiba |
| Description | Silicon Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| 1SS420 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS421 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS422 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS423 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS424 | Silicon Diode |
| 1SS426 | Silicon Diode |
| 1SS427 | Silicon Diode |
| 1SS403E | Silicon Epitaxial Planar Switching Diodes |
| 1SS405 | Schottky Barrier Diode |
| 1SS406 | Schottky Barrier Diode |