1SS420CT - Silicon Diode

Toshiba

Datasheet Details

Part number	1SS420CT
Manufacturer	Toshiba
File Size	134.82 KB
Description	Silicon Diode
Datasheet	1SS420CT Datasheet
Additional preview pages of the 1SS420CT datasheet.

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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications • Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Symbol VRM Rating 35 Unit V 0.38 +0.02 -0.03 0.5±0.03 0.05±0.03 Reverse voltage VR 30 V Maximum (peak) forward current IFM 300 mA Average forward current Surge current (10 ms) Power dissipation IO IFSM P 200 1 150 * mA A mW Junction temperature Storage temperature range Tj 125 °C Tstg −55 to 125 °C CST2 Operating temperature range Topr −40 to 100 °C JEDEC ― * Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, JEITA ― pad dimensions of 4 mm × 4 mm.

Published: May 28, 2016 |