1SS420CT Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS420CT High-Speed Switching Applications Low reverse current: IR = 5 μA (max) 0.6±0.05 1SS420CT Unit: Using continuously under heavy loads (e.g.
- Part: 1SS420CT
- Manufacturer: Toshiba (official site)
- Size: 134.82 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 1SS420 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS421 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS422 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS423 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS424 | Silicon Diode |