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1SS427 - Silicon Diode

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Part number 1SS427
Manufacturer Toshiba
File Size 190.47 KB
Description Silicon Diode
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Switching Diodes Silicon Epitaxial Planar 1SS427 1. Applications • Ultra-High-Speed Switching 2. Packaging and Internal Circuit SOD-923 fSC 1SS427 1: Cathode 2: Anode 1: Cathode 2: Anode Start of commercial production 2005-12 1 2014-07-08 Rev.3.0 1SS427 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM 200 mA Average rectified current IO 100 Power dissipation PD (Note 1) 150 mW Non-repetitive peak forward surge current IFSM (Note 2) 1 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g.
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