The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Switching Diodes Silicon Epitaxial Planar
1SS427
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal Circuit
SOD-923
fSC
1SS427
1: Cathode 2: Anode
1: Cathode 2: Anode
Start of commercial production
2005-12
1 2014-07-08 Rev.3.0
1SS427
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR 80
Peak forward current
IFM 200 mA
Average rectified current
IO 100
Power dissipation
PD (Note 1)
150
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g.
1SS427 Datasheet
