| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3903 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max.) @ V C B=5V . Complementary to 2N3905 ' Uni... |
| Features |
. Low Leakage Current
: ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance
: C ob=4pF(Max.) @ V C B=5V . Complementary to 2N3905 '
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
flAXIMUn RATINGS (Ta=25°C)
CH...
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| Datasheet |
 2N3903 Datasheet 70.25KB |
