| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . FEATURES . Low Leakage Current : ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V . Complementary to 2N3906 Unit... |
| Features |
. Low Leakage Current
: ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance
: C b=4pF(Max.) @ V C B=5V . Complementary to 2N3906
Unit in mm
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C) CHARACT...
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| Datasheet |
 2N3904 Datasheet 71.96KB |
