| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3906 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm 5.1 MAX. FEATURES: . Low Leakage Current : ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ Vcb=-5V . Compl... |
| Features |
. Low Leakage Current
: ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: v CE(sat)=-0.4V(Max.) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance
: C b=4.5pF(Max.) @ Vcb=-5V . Complementary to 2N3904
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTI...
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| Datasheet |
 2N3906 Datasheet 65.50KB |
