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2N3906 Datasheet Silicon PNP Transistor

Manufacturer: Toshiba

Overview: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3906 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm 5.1 MAX.

2N3906 datasheet preview

Datasheet Details

Part number	2N3906
Manufacturer	Toshiba
File Size	65.50 KB
Description	Silicon PNP Transistor
Datasheet	2N3906-Toshiba.pdf

Key Features

. Low Leakage Current : ICEV=-50nA(Max. ), lBEV=50nA(Max . @ VcE=-30V, VBE=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : v CE(sat)=-0.4V(Max. ) @ Ic=-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ Vcb=-5V . Complementary to 2N3904 1.

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