Full PDF Text Transcription for 2SA1204 (Reference)
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2SA1204. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE(1) = 100 to 320 • ...
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r Applications Unit: mm • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −35 V VCEO −30 V VEBO −5 V IC −800 mA IB −160 mA PC 500 PC mW 1000 (Note 1) Tj 150 °C Tstg −55 to 150 °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.0
2SA1204 Datasheet
