900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

2SA1204 Datasheet

PNP Transistor

No Preview Available !

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1204
2SA1204
Audio Frequency Amplifier Applications
Unit: mm
High DC current gain: hFE(1) = 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC2884
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
35
V
VCEO
30
V
VEBO
5
V
IC
800
mA
IB
160
mA
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
55 to 150
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 mm t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-02-04


Toshiba Electronic Components Datasheet

2SA1204 Datasheet

PNP Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
VCE = 1 V, IC = 100 mA
(Note 3)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 1 V, IC = 700 mA
IC = 500 mA, IB = 20 mA
VCE = 1 V, IC = 10 mA
VCE = 5 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
Part No. (or abbreviation code)
R
Lot No.
Characteristics indicator
Note 4
2SA1204
Min Typ. Max Unit
― −0.1 μA
― −0.1 μA
30
V
100
320
35
0.7
V
0.5
0.8
V
120 MHz
19
pF
Note 4: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2011-02-04



Part Number 2SA1204
Description PNP Transistor
Maker Toshiba
Total Page 3 Pages
PDF Download

2SA1204 Datasheet PDF





Similar Datasheet

1 2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR
Toshiba Semiconductor
2 2SA1200 PNP Transistors
Kexin
3 2SA1201 Silicon PNP Transistor
Toshiba Semiconductor
4 2SA1201 Plastic-Encapsulate Transistors
GME
5 2SA1201 Plastic-Encapsulate Transistors
WILLAS
6 2SA1201 Silicon PNP transistor
BLUE ROCKET ELECTRONICS
7 2SA1201 SILICON PNP EPITAXIAL TRANSISTOR
UTC
8 2SA1201 TRANSISTOR
Jin Yu Semiconductor
9 2SA1201 PNP Silicon Epitaxial Planar Transistor
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy