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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications Power Amplifier Applications
2SA1201
Unit: mm
• High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO
−120
V
VCEO
−120
V
VEBO
−5
V
IC
−800
mA
IB
−160
mA
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.
2SA1201 Datasheet
