| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
2SA1201 | Plastic-Encapsulate Transistors |
WILLAS |
2SA1201 | Plastic-Encapsulate Transistors |
Unisonic Technologies |
2SA1201 | SILICON PNP EPITAXIAL TRANSISTOR |
SeCoS Halbleitertechnologie GmbH |
2SA1201 | PNP Silicon Transistor |
Kexin Semiconductor |
2SA1201 | Transistors |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: VCEO = −120 V High transition frequency: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note.
