2SA2120 Datasheet | Toshiba

TOSHIBA Transistor Silicon PNP Triple Diffused Type Power Amplifier Applications - - plementary to 2SC5948 Remended for audio frequency amplifier output stage. Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB Rating - 200 - 200 - 5 - 12 - 1.2 200 150 - 55~150 Unit V V V A A W °C °C PC Tj Tstg Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-16C1A operating temperature/current/voltage, etc.) are within the Weight: 4.7 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2006-11-16 Free Datasheet http://../ Electrical Characteristics (Tc = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO h FE (1) DC current gain (Note) h FE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE f T Cob Test Conditions VCB = - 200 V, IE = 0 VEB = - 5 V, IC = 0 IC = - 50 m A, IB = 0 VCE = - 5 V, IC = - 1 A VCE = - 5 V, IC = - 7 A IC = - 8 A, IB = - 0.8 A VCE = - 5 V, IC...