2SB1034 transistor equivalent, silicon pnp transistor.
. High DC Current Gain
: hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage
: V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC.
SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
7. 9 MAX.
FEATURES . High DC.
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