Datasheet Details
| Part number | 2SB1034 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1034-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1034 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.68 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1034-INCHANGE.pdf |
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·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1034 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1034 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A, IB= -1mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A, IB= -1mA ICBO Collector Cutoff Current VCB= -80V, IE= 0 IEBO Emitter Cutoff Current VEB= -8V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1034 | SILICON PNP TRANSISTOR | Toshiba |
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2SB1034 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SB1005 | PNP Transistor |
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| 2SB1016 | PNP Transistor |