Datasheet Details
| Part number | 2SB1032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.31 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1032-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.31 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1032-INCHANGE.pdf |
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·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : = V(BR)CEO -120V(Min) ·plement to Type 2SD1436 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -15 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1032 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1032 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -5A ,IB= -10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -15A ,IB= -100mA ICBO Collector Cutoff current ICEO Collector Cutoff current VCB= -120V, IE= 0 VCE= -100V, RBE= ∞ hFE DC Current Gain IC= -5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1032 | Silicon PNP Transistor | Hitachi Semiconductor |
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