Datasheet Details
| Part number | 2SB1033 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.20 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1033-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1033.
| Part number | 2SB1033 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.20 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1033-INCHANGE.pdf |
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|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·plement to Type 2SD1437 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1033 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1031 | PNP Transistor |
| 2SB1032 | PNP Transistor |
| 2SB1034 | PNP Transistor |
| 2SB1037 | PNP Transistor |
| 2SB1038 | Silicon PNP Power Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |