Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
- Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
- plement to Type 2SD1310
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier...