Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.)
Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A
Complement to Type 2SD1310
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency
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isc Silicon PNP Power Transistor
2SB1038
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage
: VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1310 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-5
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.6
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.
2SB1038 Datasheet
