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2SB1037 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) Wide Area of Safe Operation Complement to Type 2SD1459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applicatio

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 30 W 2 175 ℃ Tstg Storage Temperature Range -55~175 ℃ 2SB1037 isc website：www.iscsemi.