Datasheet Details
| Part number | 2SB1037 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.61 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1037-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1037 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.61 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1037-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV vertical output, sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 30 W 2 175 ℃ Tstg Storage Temperature Range -55~175 ℃ 2SB1037 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1037 | PNP Transistor | Sanyo Semicon Device |
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2SB1037 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB1033 | PNP Transistor |
| 2SB1034 | PNP Transistor |
| 2SB1038 | Silicon PNP Power Transistor |
| 2SB1005 | PNP Transistor |
| 2SB1007 | PNP Transistor |
| 2SB1009 | PNP Transistor |
| 2SB1015 | PNP Transistor |
| 2SB1016 | PNP Transistor |