2SB1034
2SB1034 is SILICON PNP TRANSISTOR manufactured by Toshiba.
SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER)
2SB1 034
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
7. 9 MAX.
Features
. High DC Current Gain
: hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage
: V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA)
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage
VCBO -80 V VCEO -80 V
Emitter-Base Voltage
VEBO
-8 V
Collector Current ic -2 A
Base Current
-0.5
Collector Power Dissipation (Tc=25°C)
Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT
PC 15
Ti
Tstg
-55-150...
