2SB1034 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. High DC Current Gain : hFE=2000(Min. ) (VCE=-2V, Ic=-1A) . Low Saturation Voltage : V CE ( sa t)=-1.5V(Max. ) (I C=-1A, IB=-lmA).

2SB1034 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB1034
Manufacturer	Toshiba
File Size	85.63 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB1034 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) 2SB1 034 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 7. 9 MAX. FEATURES . High DC Current Gain : hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage : V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 V VCEO -80 V Emitter-Base Voltage VEBO -8 V Collector Current ic -2 A Base Current IB -0.5 A Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT PC 15 Ti Tstg 150 -55-150 COLLECTOR W °C °C 1. EMITTER 2. COLLECTOR (HEAT SINK) 3.