| Part Number | 2SB1034 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1A ·Minimum Lo. PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A, IB= -1mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A, IB= -1mA ICBO Collector Cutoff Current VCB= -80V, IE= 0 IEBO Emitter Cutoff Current VEB=. |
2SB1034 Datasheet and Specifications PDF
The 2SB1034 is a PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB1034 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-126 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mou. r cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-80V; IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 2000 30 50 MIN -80 TYP. 2SB1034 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB. |
| Part Number | 2SB1034 Datasheet |
|---|---|
| Description | SILICON PNP TRANSISTOR |
| Manufacturer | Toshiba |
| Overview | SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) 2SB1 034 MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 7. 9 MA. . High DC Current Gain : hFE=2000(Min.) (VCE=-2V, Ic=-1A) . Low Saturation Voltage : V CE ( sa t)=-1.5V(Max.) (I C=-1A, IB=-lmA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO -80 V VCEO -80 V Emitter-Base Voltage VEBO -8 V C. |