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2SB1031 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor 2SB1031.

General Description

·High DC Current Gain- : hFE = 1000(Min)@ IC= -8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·plement to Type 2SD1435 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, RBE= ∞ V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ,IB= -16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -150mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -8A ,IB= -16mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -15A ,IB= -150mA ICBO Collector Cutoff current VCB= -100V, IE= 0 ICEO Collector Cutoff current VCE= -80V, RBE= ∞ hFE DC Current Gain IC= -8A ;

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