2SB1031 Datasheet and Specifications PDF

The 2SB1031 is a Silicon PNP Transistor.

Key Specifications

Max Operating Temp140 °C
Datasheet4U Logo
Part Number2SB1031 Datasheet
ManufacturerHitachi Semiconductor
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Part Number2SB1031 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE = 1000(Min)@ IC= -8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Complement to Type 2SD1435 ·Minimum Lot-to-Lot variations for robust device performan. (SUS) Collector-Emitter Sustaining Voltage IC= -30mA, RBE= ∞ V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ,IB= -16mA VCE(sat)-2 Collector-Emitter Saturation Voltage .

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