| Part Number | 2SB1032 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1032(K)
Silicon PNP Triple Diffused
Application
Power switching complementary pair with 2SD1436(K)
Outline
TO-3P
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3
1
2.
10 A, IB = *0.1 A*1 I C = *5 A, IB = *10 mA*1 I C = *10 A, IB = *0.1 A*1 I D = 10 A*1 VCC = *30 V, I C = *5 A, IB1 = *IB2 = *10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to em. |
2SB1032 Datasheet and Specifications PDF
The 2SB1032 is a Silicon PNP Transistor.
Key Specifications
| Part Number | 2SB1032 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : = V(BR)CEO -120V(Min) ·Complement to Type 2SD1436 ·Minimum Lot-to-Lot variations for robust device performanc. n Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -5A ,IB= -10mA VBE(sat)-2. |