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2SB595 Datasheet, Toshiba

2SB595 transistor equivalent, silicon pnp transistor.

2SB595 Avg. rating / M : 1.0 rating-110

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2SB595 Datasheet

Features and benefits


* High Breakdown Voltage : VCEO=-100V
* Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.)
* Complementary to 2SD525.
* Recommended for 30W H.

Application

FEATURES
* High Breakdown Voltage : VCEO=-100V
* Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.

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2SB595 Page 1 2SB595 Page 2

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