Datasheet Details
| Part number | 2SB595 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.87 KB |
| Description | PNP Transistor |
| Datasheet | 2SB595-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB595.
| Part number | 2SB595 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.87 KB |
| Description | PNP Transistor |
| Datasheet | 2SB595-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage :VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type 2SD525 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Recommended for 30W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IE Emitter Current-Continuous 5 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB595 | SILICON PNP TRANSISTOR | Toshiba |
 |
2SB595 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB596 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |
| 2SB511 | PNP Transistor |
| 2SB512 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |