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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
• High Breakdown Voltage : VCEO=-100V • Low Collector-Emitter Saturation Voltage
: VCE(sat)=-2.0V(Max.) • Complementary to 2SD525.
• Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
VcBO VCEO VEBO
Collector Current
ic
Emitter Current
IE
Base Current
Collector Power Dissi-
pation (T C =25°C)
Junction Temperature Storage Temperature Ranee
IB PC
Tstg
RATING -100 -100 -5 -5
-4
40 150 -55 ^150
UNIT V
°C
10.3 MAX.
Unit in mm
03.6±O.2
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC EIAJ TOSHIBA
TO-220AB
Mounting Kit No. AC75 Weight : 1.
2SB595 Datasheet
