2SB595
2SB595 is SILICON PNP TRANSISTOR manufactured by Toshiba.
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
Features
- High Breakdown Voltage : VCEO=-100V
- Low Collector-Emitter Saturation Voltage
: VCE(sat)=-2.0V(Max.)
- plementary to 2SD525.
- Remended for 30W High-Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
VcBO VCEO VEBO
Collector Current ic
Emitter Current
Base Current
Collector Power Dissi- pation (T C =25°C)
Junction Temperature Storage Temperature Ranee
IB PC
Tstg
RATING -100 -100 -5 -5
-4
40 150 -55 ^150
UNIT V
°C
10.3 MAX.
Unit in...
