2SB673 Key Features
- High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A)
- Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A)
- plementary to 2SD633, 2SD634 and 2SD635
- Part: 2SB673
- Manufacturer: Toshiba (official site)
- Size: 119.67 KB
Other 2SB673 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SB673 | PNP Transistor |
SavantIC |
2SB673 | SILICON POWER TRANSISTOR |
2SB673 Description
B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.