2SB673 - PNP Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD633 Minimum Lot-to-Lot variations for robust device performance and reliable

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Datasheet Details

Part number	2SB673
Manufacturer	Inchange Semiconductor
File Size	210.31 KB
Description	PNP Transistor
Datasheet	2SB673 Datasheet

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isc Silicon PNP Darlington Power Transistor 2SB673 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.