2SB673
2SB673 is PNP Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min)
- Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
- plement to Type 2SD633
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive...
