Datasheet Details
| Part number | 2SB673 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.31 KB |
| Description | PNP Transistor |
| Datasheet | 2SB673-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor 2SB673.
| Part number | 2SB673 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.31 KB |
| Description | PNP Transistor |
| Datasheet | 2SB673-INCHANGE.pdf |
|
|
|
·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -6mA ICBO Collector Cutoff Current VCB= -100V, IE= 0 IEBO Emitter Cutoff Current VEB= -5V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB673 | Silicon PNP Transistor | Toshiba |
 |
2SB673 | SILICON POWER TRANSISTOR | SavantIC |
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