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2SB673 - Silicon PNP Transistor

Download the 2SB673 datasheet PDF. This datasheet also covers the 2SB674 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A).
  • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A).
  • Complementary to 2SD633, 2SD634 and 2SD635.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB674_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB673
Manufacturer Toshiba
File Size 119.67 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB673 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: B673" 2SB674 2SB675I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • High DC Current Gain : hFE=2000(Min. ) (VCE=-3V,I C=-3A) • Low Saturation Voltage : Vc E ( sa t)=-1.5V(Max. ) (Ic=-3A) • Complementary to 2SD633, 2SD634 and 2SD635. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. £to.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current 2SB673 2SB674 2SB675 2SB673 2SB674 2SB675 SYMBOL v CBO VcEO VEBO ic IB RATING -100 -80 -60 -100 -80 -60 -5 -7 -0.