2SB754
2SB754 is Silicon PNP Transistor manufactured by Toshiba.
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Features
- High Collector Current : Ic=-7A
- Low Collector Saturation Voltage
: vCE(sat)=-0.4V (Max.) at I C=-4A
- High Power Dissipation : Pc=60W at Tc=25°C
- plementary to 2SD844.
Unit in mm
0Z^±O.Z
7=?s
> r-7.
ES rfi 2.0±0.3,
+ 0.30
- 1.0 0.25
-O- u
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Emitter Current
Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
SYMBOL VCBO VCEO VEBO
RATING -50 -50
UNIT V
-5
-7
PC L stg
2.5...
