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2SB754 Toshiba (https://www.toshiba.com/) Silicon PNP Transistor

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Description SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current : Ic=-7A • Low Collector Saturation Voltage : vCE(sat)=-0.4V (Max.) at I C=-4A • High Power Dissipation : Pc=60W at Tc=25°C • Complementary to 2SD844. Unit in mm 0Z^±O.Z 7=?s > r-7. ES rfi 2.0±0.3, + 0.30 — 1.0 0.25 -O- u MAXIMUM RATINGS (Ta=25...
Features
• High Collector Current : Ic=-7A
• Low Collector Saturation Voltage : vCE(sat)=-0.4V (Max.) at I C=-4A
• High Power Dissipation : Pc=60W at Tc=25°C
• Complementary to 2SD844. Unit in mm 0Z^±O.Z 7=?s > r-7. ES rfi 2.0±0.3, + 0.30 — 1.0 0.25 -O- u MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitt...

Datasheet PDF File 2SB754 Datasheet - 91.37KB
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