Datasheet4U Logo Datasheet4U.com

2SB754 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) High Collector Current: IC= -7A Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max) @IC= -4A Complement to Type 2SD844 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

📥 Download Datasheet

Datasheet preview – 2SB754

Datasheet Details

Part number 2SB754
Manufacturer INCHANGE
File Size 195.59 KB
Description PNP Transistor
Datasheet download datasheet 2SB754 Datasheet
Additional preview pages of the 2SB754 datasheet.

📁 Similar Datasheet

  • 2SB754 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB754 - Silicon PNP Transistor (Toshiba)
  • 2SB753 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB753 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB755 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB755 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB757 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705 - Silicon PNP Power Transistors (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB754 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max) @IC= -4A ·Complement to Type 2SD844 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 2.
Published: |