Inchange Semiconductor 2SB754
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.2SB754 Specifications
- Max Collector Current : 7A
- Terminals : 3
- Collector Emitter Voltage : 50V
Source:
Octopart
| Part No. | 2SB754 |
|---|---|
| Datasheet | 2SB754 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min)●High Collector Current: IC= -7A
●Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max) @IC= -4A
●Complement to Type 2SD844
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High current switching applications.●Power amplifier applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 2.5 W 60 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB754ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 -...
