Datasheet Details
| Part number | 2SB754 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.59 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB754 Datasheet
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| Part number | 2SB754 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.59 KB |
| Description | PNP Transistor |
| Datasheet |
2SB754 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max) @IC= -4A ·Complement to Type 2SD844 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications.
·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 2.5 W 60 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB754 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA;
isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB754.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB754 | SILICON POWER TRANSISTOR | SavantIC |
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2SB754 | Silicon PNP Transistor | Toshiba |
| Part Number | Description |
|---|---|
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| 2SB705B | PNP Transistor |
| 2SB707 | PNP Transistor |
| 2SB708 | PNP Transistor |
| 2SB713 | PNP Transistor |
| 2SB719 | PNP Transistor |