• Part: 2SB754
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 91.37 KB
Download 2SB754 Datasheet PDF
Toshiba
2SB754
FEATURES - High Collector Current : Ic=-7A - Low Collector Saturation Voltage : v CE(sat)=-0.4V (Max.) at I C=-4A - High Power Dissipation : Pc=60W at Tc=25°C - plementary to 2SD844. Unit in mm 0Z^±O.Z 7=?s > r-7. ES rfi 2.0±0.3, + 0.30 - 1.0 0.25 -O- u MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range SYMBOL VCBO VCEO VEBO RATING -50 -50 UNIT V -5 -7 PC L stg 2.5 60 150 -55^150 do + 5.45±0.2 5.45±0.2 1 p--±-n 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER TOSHIBA - 16B 1A Weight ELECTRICAL CHARACTERISTICS...