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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
• High Collector Current : Ic=-7A • Low Collector Saturation Voltage
: vCE(sat)=-0.4V (Max.) at I C=-4A • High Power Dissipation : Pc=60W at Tc=25°C • Complementary to 2SD844.
Unit in mm
0Z^±O.Z
7=?s
> r-7.
ES
rfi 2.0±0.3,
+ 0.30 — 1.0 0.25
-O-
u
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Emitter Current
Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
SYMBOL VCBO VCEO VEBO
RATING -50 -50
UNIT V
-5
-7
IE
PC L stg
2.5 60
150 -55^150
do
+
5.45±0.2 5.45±0.2
1
p--±-n
1. BASE 2. COLLECTOR(HEAT SINK) 3.
2SB754 Datasheet
