Datasheet Summary
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) o
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
Features
:
High Collector Current : Iq=-7A Low Collector Saturation Voltage
: VcE(sat)=-0.5V(Max.) at I C =-4A High Collector Power Dissipation. plementary to 2SD843.
INDUSTRIAL APPLICATIONS Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
SYMBOL 'CBO 'CEO 'EBO
RATING -100 -80 -5
UNIT
Collector Current ic -7
1. BASE
Collector Power Dissipation
Ta=25°C Tc=25°C
1.5 40
2. COLLECTOR (HEAT SINK) 3. EMITTER
Junction Temperature
Ti 150
JEDEC EIAJ
Storage Temperature Range stg...
