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2SB753 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • High Collector Current : Iq=-7A Low Collector Saturation Voltage : VcE(sat)=-0.5V(Max. ) at I C =-4A High Collector Power Dissipation. Complementary to 2SD843.

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Datasheet Details

Part number 2SB753
Manufacturer Toshiba
File Size 136.69 KB
Description SILICON PNP TRANSISTOR
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SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) o 2SB753 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES: High Collector Current : Iq=-7A Low Collector Saturation Voltage : VcE(sat)=-0.5V(Max.) at I C =-4A High Collector Power Dissipation. Complementary to 2SD843. INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL 'CBO 'CEO 'EBO RATING -100 -80 -5 UNIT Collector Current ic -7 1. BASE Collector Power Dissipation Ta=25°C Tc=25°C PC 1.5 40 2. COLLECTOR (HEAT SINK) 3.
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