Datasheet Details
| Part number | 2SB753 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | PNP Transistor |
| Download | 2SB753 Download (PDF) |
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| Part number | 2SB753 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | PNP Transistor |
| Download | 2SB753 Download (PDF) |
|
|
|
·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
isc Silicon PNP Power Transistor 2SB753.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB753 | SILICON PNP TRANSISTOR | Toshiba |
 |
2SB753 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB754 | PNP Transistor |
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| 2SB757 | PNP Transistor |
| 2SB703 | PNP Transistor |
| 2SB705 | PNP Transistor |
| 2SB705B | PNP Transistor |
| 2SB707 | PNP Transistor |
| 2SB708 | PNP Transistor |
| 2SB713 | PNP Transistor |
| 2SB719 | PNP Transistor |