2SB755
FEATURES
- High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) plementary to 2SD845. Remended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Emitter Current Collector Power Dissipation „
I (Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO
RATING -150 v EBO IC
-5 -12
IE 12
PC 120 Ti 150
Tstg -55^,150
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC
EIAJ TOSHIBA
- 34 A 1A
Weight : 10. 8g
ELECTRICAL CHARACTERISTICS (Ta=25 a C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current Collector- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
I CB0 l EBO v (BR) CEO
V (BR)EB0
VCB=-150V, I E=0 VEB=-5V, lc=0 IC=-0.1A,...
