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2SB755 - SILICON PNP TRANSISTOR

Datasheet Summary

Features

  • High Breakdown Voltage VCEO=-150V (Min. ) High Transition Frequency : f T=20MHz (Typ. ) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm.

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Datasheet Details

Part number 2SB755
Manufacturer Toshiba
File Size 97.66 KB
Description SILICON PNP TRANSISTOR
Datasheet download datasheet 2SB755 Datasheet
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Full PDF Text Transcription

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2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation „ I (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO RATING -150 v EBO IC -5 -12 IE 12 PC 120 Ti 150 Tstg -55^,150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC EIAJ TOSHIBA 2 — 34 A 1A Weight : 10.
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