2SB755 Overview
2SB755 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
2SB755 Key Features
- High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) plementary to 2SD845. Remended for
- 34 A 1A
2SB755 Applications
- High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) plementary to 2SD845. Remended for 80W High-Fidelity Audio Frequency Ampli
