2SC1624 - Silicon NPN Transistor

Features

High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815.

Toshiba

Datasheet Details

Part number	2SC1624
Manufacturer	Toshiba
File Size	80.72 KB
Description	Silicon NPN Transistor
Datasheet	2SC1624 Datasheet
Additional preview pages of the 2SC1624 datasheet.

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Full PDF Text Transcription

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2SC1 624' 2SC1 625, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: High Breakdown Voltage : VCE0 =120V (2SC16 24) Complementary to 2SA814 and 2SA815. SILICON NPN PLANAR TYPE 10. 3 MAX. Unit in mm ^ 3.6 ±0-2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC16 24 2SC1625 CollectorEmi tter Voltage 2SC16 24 2SC16 25 Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL RATING 120 V CBO 100 120 V CEO 100 v EBO 5 In 1 IE -1 ?C 15 T J T stg 150 -55^150 UNIT V V 1. BASE V 2. COLLECTOR (HEAT SINK) A 3. EMITTER A JEDEC W T0-220AB °C TOSHIBA 2-10A1A °C Mounting Kit No. AC75 Weight : 1.

Published: May 27, 2024 |