Datasheet Details
| Part number | 2SC1624 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1624-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1624.
| Part number | 2SC1624 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1624-INCHANGE.pdf |
|
|
|
·Silicon NPN planar type ·plementary to 2SA814 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IE Emitter Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 1.5 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1624 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC1624 | Silicon NPN Transistor | Toshiba |
 |
2SC1624 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1623 | NPN Transistor |
| 2SC1625 | NPN Transistor |
| 2SC1626 | NPN Transistor |
| 2SC1609 | NPN Transistor |
| 2SC1610 | NPN Transistor |
| 2SC1617 | NPN Transistor |
| 2SC1618 | NPN Transistor |
| 2SC1619 | NPN Transistor |
| 2SC1667 | NPN Transistor |
| 2SC1672 | NPN Transistor |