Datasheet Details
| Part number | 2SC1623 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1623-INCHANGE.pdf |
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Overview: isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1623.
| Part number | 2SC1623 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.76 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1623-INCHANGE.pdf |
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·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = 6V, IC = 1mA ·High voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 60V;
IE= 0 IEBO Emitter Cutoff Current VEB= 5V;
IC= 0 hFE DC Current Gain IC= 1mA ;
Compare 2SC1623 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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