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2SC1623 - NPN Transistor

General Description

SOT-23 plastic-encapsulate transistors High DC current gain:hFE=200(TYP) @VCE = 6V, IC = 1mA High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM

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isc Silicon NPN Transistor INCHANGE Semiconductor 2SC1623 DESCRIPTION ·SOT-23 plastic-encapsulate transistors ·High DC current gain:hFE=200(TYP) @VCE = 6V, IC = 1mA ·High voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.