Kexin Electronics 2SC1623
NPN Silicon Transistor
FEATURES
1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 100 200 150 -55 to +150 Unit V V V mA mWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Output capacitance Transiton Frequency *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 60V, IE=0 VEB = 5V, IC=0 VCE = 6V , IC = 1mA 90 200 0.15 0.86 0.55 0.62 3.0 250 Min Typ Max 0.1 0.1 600 0.3 1 0.65 V V V pF MHz Unit A A VCE(sat) IC = 100mA , IB = 10mA VBE(sat) IC = 100mA , IB = 10mA VBE Cob fT VCE = 6V , IC = 1mA VCB = 6V , IE = 0 , f = 1.0MHz VCE...