Renesas Electronics 2SC1623
NPN Transistor
| Part No. | 2SC1623 |
|---|---|
| Datasheet | 2SC1623 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)● High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC 100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55 to +150 °C <R> PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ± 0.2 1.5 TYP. 0.65 +0.1 –0.15 0.4 2.9 ± 0.2 0.95 0.95 TYP. TYP. +0.1 –0.05 2 3 1 Marking 0.4 +0.1 –0.06 1.1 to 1.4 0.3 TYP. 0.16 0 to 0.1ELECTRICAL CHARACTERISTICS
(TA = 25°C) <R> CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base to Saturation Voltage Base to Emitter voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob MIN. 90 0.55 Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% TYP. 200 0.15 0.86 0.62 250 3.0 MAX. 0.1 0.1 600 0.3 1.0 0.65 hFE CLAS...
