2SC1623 - Silicon Transistor

Galaxy Microelectronics

Key Features

High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).
High Voltage:VCEO=50V.
MSL 1.

2SC1623 silicon transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SC1623
Manufacturer	Galaxy Microelectronics
File Size	214.52 KB
Description	Silicon Transistor
Datasheet	2SC1623 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA).  High Voltage:VCEO=50V.  MSL 1. APPLICATIONS Pb Lead-free  NPN Silicon Epitaxial Planar Transistor.  Audio frequency general purpose amplifier. ORDERING INFORMATION Type No. Marking 2SC1623 L4/L5/L6/L7 2SC1623 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 60 50 5 100 200 -55 to +150 Units V V V mA mW ℃ C018 Rev.A www.gmesemi.