2SC1623W - NPN Transistor

Galaxy Microelectronics

Key Features

High DC current gain: hFE=200TYP.
High voltage: VCEO=50V.
Power dissipation. (PC=200mW) Pb Lead-free.

2SC1623W npn transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SC1623W
Manufacturer	Galaxy Microelectronics
File Size	229.57 KB
Description	NPN Transistor
Datasheet	2SC1623W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE=200TYP.  High voltage: VCEO=50V.  Power dissipation.(PC=200mW) Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier. Production specification 2SC1623W ORDERING INFORMATION Type No. Marking 2SC1623W L4/L5/L6/L7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 100 Units V V V mA PC Tj,Tstg Collector Dissipation Junction and Storage Temperature 200 -55 to +150 mW ℃ F035 Rev.A www.gmesemi.