Galaxy Century Microelectronics 2SC1623W
NPN Transistor
FEATURES
● High DC current gain: hFE=200TYP.● High voltage: VCEO=50V.
● Power dissipation.(PC=200mW) Pb Lead-free
APPLICATIONS
● Audio frequency general purpose amplifier. Production specification 2SC1623W ORDERING INFORMATION Type No. Marking 2SC1623W L4/L5/L6/L7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 100 Units V V V mA PC Tj,Tstg Collector Dissipation Junction and Storage Temperature 200 -55 to +150 mW ℃ F035 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC1623WELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO V(BR)CEO IC=10