FEATURES
Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=10mA 60 50 5 0.1 0.1 90 600 0.3 1 250 0. 35 2. 92¡ À0. 05 1. 9 µA µA V V MHz fT CLASSIFICATION OF hFE(1) Rank Range Marking L4 90-180 L4 L5...
TRANSYS