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DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS
PACKAGE DIMENSIONS
in millimeters
2.8 ± 0.2 0.4 +0.1 –0.05 1.5 0.65 +0.1 –0.15
0.95
Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 ˚C –55 to +150 ˚C 200 mW
1.1 to 1.4
VCBO VCEO VEBO IC
60 50 5.0 100
V V V mA
2.9 ± 0.2
2 3
0.95
Marking 0.3 0.16 +0.1 –0.
2SC1623 Datasheet
