NEC 2SC1623
NPN Transistor
FEATURES
● High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)● High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 0.4 +0.1 –0.05 1.5 0.65 +0.1 –0.15 0.95 Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 ˚C –55 to +150 ˚C 200 mW 1.1 to 1.4 VCBO VCEO VEBO IC 60 50 5.0 100 V V V mA 2.9 ± 0.2 2 3 0.95 Marking 0.3 0.16 +0.1 –0.06 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 1.0 mA* V V V MHz pF IC = 100 mA, IB = 10 mA* IC = 100 mA, IB = 10 mA* VCE = 6.0 V, IC = 1.0 mA* VCE = 6.0 V, IE = –10 mA VCB = 6.0 V, IE = 0, f = 1.0 MHz 0 to 0.1ELECTRICAL CHARACTERISTICS
(TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Co...