Weitron Technology 2SC1623
NPN Transistor
MAXIMUM RATINGS
(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 50 60 5.0 100 200 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON 1/3 02-Aug-06 2SC1623ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage IC = 1mA, I B = 0 Collector-Base Breakdown Voltage IC = 100µA, I E = 0 Emitter-Base Breakdown Voltage IE= 100µA, IC=0 Collector Cutoff Current VCB = 60V, I E = 0 Emitter Cutoff Current VEB = 5V, I C = 0 Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 50 60 Typ - Max - Unit V V 5.0 - - 0.1 0.1 V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = 100mA, I B = 10mA Base-Emitter Saturation Voltage IC = 100mA, I B = 10mA DC Current Transfer Ration VCE = 6V, I C = 1mA VCE(sat) 0.3 V VBE(sat) hFE 90 - 1.0 600 V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE = 6V,...