| Part Number | 2SC1623 |
|---|---|
| Manufacturer | NEC |
| Overview |
DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA).
* High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) * High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 0.4 +0.1 *0.05 1.5 0.65 +0.1 *0.15 0.95 Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Volta. |
2SC1623 Datasheet
The 2SC1623 is a NPN Transistor.
| Part Number | 2SC1623 |
|---|---|
| Description | NPN SILICON TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
3
2
1 SOT-23
The UTC 2SC1623 is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623 is usually used .
* High breakdown Voltage * High DC Current Gain
* ORDERING INFORMATION Ordering Number Halogen Free 2SC1623G-x-AE3-R B: Base C: Collector Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel Lead Free 2SC1623L-x-AE3-R Note: Pin Assignment: E: Emitter 2SC1623L-x-AE3-R (1) Packing Type (2). |
| Part Number | 2SC1623 |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Weitron Technology |
| Overview | 2SC1623 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Coll. ansfer Ration VCE = 6V, I C = 1mA VCE(sat) 0.3 V VBE(sat) hFE 90 - 1.0 600 V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE = 6V, IC =10mA fT 250 MHz CLASSIFICATION hFE Rank Range Marking L4 90-180 L4 L5 135-270 L5 L6 200-400 L6 L7 300-600 L7 WEITRON http://www.weitron.com.tw 2/3 02. |
| Part Number | 2SC1623 |
|---|---|
| Description | Transistors |
| Manufacturer | TRANSYS |
| Overview | Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC1623 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=. Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 PCM: 200 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current mA ICM: 100 Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL . |